IBM Research, its partners GlobalFoundries and Samsung have developed a pioneering industrial development process of 30,000 million silicon transistors capable of fitting into a 5 nanometer chip. Although we still have to wait for the launch of its commercial version, this innovation is an important technological advance.
Before getting here, specifically two years ago, these same developers created a 7 nm test chip with 20,000 million transistors. As IBM has advanced through its website, this same process has been used, EUV-extreme ultraviolet lithography-, which will be presented at the VLSI Technology Symposium and Circuits to be held in Kyoto (Japan), from June 5 to 9.The advance will revitalize the industry that deals with creating chips and keep technology on the path marked by Moore's Law: the number of transistors will go away doubling every two years, as we could read in Xataka.
Today, other companies like Intel have managed to stuff 15,000 million transistors using the FinFET process. But these scientists have created these new 5 nm chips through silicon nanosheets as a transistor structure, instead of using the FinFET architecture, standardized in the semiconductor industry up to 7 nm node technology.
The 5 nanometer chip offers 40% more performance
In this sense, a 5nm chip based on semiconductor'nanosheet 'is able to offer 40% more performance and a 75% energy saving compared to a current 10nm chip , according to the driving companies.
What can you get? This improvement in chip performance can benefit technologies such as artificial cognitive intelligence, the Internet of Things or cloud applications. In addition, it could lead to greater energy savings compared to our mobile phones, whose batteries would last twice or triple the time.
Photographs: IBM News
Comments
Post a Comment